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1/11 march 2002 . STP55NF03L stb55nf03l stb55nf03l-1 n-channel 30v - 0.01 w - 55a to-220/d 2 pak/i 2 pak stripfet ? ii power mosfet n typical r ds (on) = 0.01 w n optimized for high switching operations n low gate charge n logic level gate drive description this power mosfet is the latest development of stmicroelectronis unique osingle feature size ? o strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications n low voltage dc-dc converters n high current, high switching speed n high efficiency switching circuits type v dss r ds(on) i d STP55NF03L stb55nf03l stb55nf03l-1 30 v 30 v 30 v <0.013 w <0.013 w <0.013 w 55 a 55 a 55 a 1 2 3 to-220 1 3 d 2 pak to-263 i 2 pak to-262 1 2 3 internal schematic diagram absolute maximum ratings ( ? ) pulse width limit ed by safe operating area. symbol parameter value unit v ds drain-source voltage (v gs =0) 30 v v dgr drain-gate voltage (r gs =20k w ) 30 v v gs gate- source voltage 16 v i d drain current (continuous) at t c =25 c 55 a i d drain current (continuous) at t c = 100 c 39 a i dm ( ? ) drain current (pulsed) 220 a p tot total dissipation at t c =25 c 80 w derating factor 0.53 w/ c t stg storage temperature -60 to 175 c t j max. operating junction temperature 175 c
STP55NF03L stb55nf03l/-1 2/11 thermal data electrical characteristics (t case =25 c unless otherwise specified) off on (* ) dynamic rthj-case rthj-amb t l thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose max max typ 1.875 62.5 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a, v gs =0 30 v i dss zero gate voltage drain current (v gs =0) v ds = max rating v ds = max rating t c = 125 c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 16v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d = 250 m a 1v r ds(on) static drain-source on resistance v gs =10v i d = 27.5 a v gs = 4.5 v i d = 27.5 a 0.01 0.013 0.013 0.020 w w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds >i d(on) xr ds(on)max, i d = 27.5 a 30 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs =0 1265 435 115 pf pf pf
3/11 STP55NF03L stb55nf03l/-1 switching on switching off source drain diode (*) pulsed: pulse duration = 300 m s, duty cycle 1.5 %. ( ? ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =15v i d = 27.5 a r g = 4.7 w v gs = 4.5 v (resistive load, figure 3) 28 400 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =24vi d =55av gs = 4.5v 20 7 10 27 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 15v i d = 27.5 a r g = 4.7 w, v gs = 4.5 v (resistive load, figure 3) 25 50 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 55 220 a a v sd (*) forward on voltage i sd =55a v gs =0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 55 a di/dt = 100a/ m s v dd =30v t j = 150 c (see test circuit, figure 5) 70 160 4.5 ns nc a electrical characteristics (continued) safe operating area thermal impedance
STP55NF03L stb55nf03l/-1 4/11 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/11 STP55NF03L stb55nf03l/-1 normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage vs temperature. ..
STP55NF03L stb55nf03l/-1 6/11 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
7/11 STP55NF03L stb55nf03l/-1 dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.028 0.037 b2 1.14 1.7 0.045 0.067 c 0.45 0.6 0.018 0.024 c2 1.21 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.394 0.409 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.591 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.069 m 2.4 3.2 0.094 0.126 r 0.4 0.016 v2 0 4 0 4 d 2 pak mechanical data
STP55NF03L stb55nf03l/-1 8/11 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
9/11 STP55NF03L stb55nf03l/-1 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 l l1 b2 b d e a c2 c a1 l2 e p011p5/e to-262 (i 2 pak) mechanical data
STP55NF03L stb55nf03l/-1 10/11 dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0075 0.082 r 50 1.574 t 0.25 0.35 .0.0098 0.0137 w 23.7 24.3 0.933 0.956 dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data * on sales type tube shipment (no suffix)* tape and reel shipment (suffix ot4o)* d 2 pak footprint tape mechanical data
11/11 STP55NF03L stb55nf03l/-1 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express writt en approval of stmicroelectronics. the st logo is registered trademark of stmicroelectronics ? 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com

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